Part Number Hot Search : 
0T120 7E4EF 1220A SFI9530 D486B S2S4000F PD2504 2MFK2P
Product Description
Full Text Search

GT25H101 - Insulated Gate Bipolar Transistor

GT25H101_7700904.PDF Datasheet

 
Part No. GT25H101
Description Insulated Gate Bipolar Transistor

File Size 106.95K  /  3 Page  

Maker


ETC



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: GT25G101
Maker: TOSHIBA
Pack: TO-262
Stock: Reserved
Unit price for :
    50: $2.49
  100: $2.37
1000: $2.24

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ GT25H101 Datasheet PDF Downlaod from Datasheet.HK ]
[GT25H101 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for GT25H101 ]

[ Price & Availability of GT25H101 by FindChips.com ]

 Full text search : Insulated Gate Bipolar Transistor


 Related Part Number
PART Description Maker
IRG4PC50S IRG4PC50SPBF 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
IRF[International Rectifier]
IRG4BC40K Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International Rectifier, Corp.
IRF[International Rectifier]
IRG4PH40K 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRF[International Rectifier]
MGW12N120 Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
ONSEMI[ON Semiconductor]
CT90AM-18 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
MGW21N60ED-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGS13002DD MGS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
MOTOROLA[Motorola, Inc]
MGW12N120D-D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
IRG4PC30FDPBF IRG4PC30FDPBF-15 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT
International Rectifier
CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
 
 Related keyword From Full Text Search System
GT25H101 precision GT25H101 precision GT25H101 Noise GT25H101 PDF GT25H101 varactor
GT25H101 pnp GT25H101 read GT25H101 pnp GT25H101 Power GT25H101 interrupt
 

 

Price & Availability of GT25H101

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.72374606132507